Samsung Electronics is expected to expand the proportion of its fourth generation V NAND flash to 50% this year in line with the full-fledged operation of its Pyeongtaek Semiconductor business site.

Samsung Electronics revealed on June 15 that it will expand its product lineup to NAND as a server, PC, and mobile while mass-producing 4G (64-step) 256 Gb 3-bit V-NAND flash which has improved performance and reliability compared to the existing third generation. The 4th generation V NAND has improved speed, productivity, and power efficiency by more than 30% over the third generation through applying three technologies such as ultra-high-density cell structure, process, ultra-high-speed operation circuit design, and ultrahigh reliability CTF film formation.

Samsung Electronics has been supplying Solid-State Drives (SSDs) to major PC producers since January. The company plans to expand its fourth-generation V-NAND products to include eUFS (embedded Universal Flash Storage) for mobile devices and memory cards. In addition, the monthly production proportion of 4G V NAND is expected to increase to over 50% within this year.

Meanwhile, the fourth-generation V-NAND is being produced at the Hwaseong plant in Gyeonggi province and will be produced at the Pyeongtaek plant, which construction will soon be completed. Samsung Electronics is reportedly in the process of changing the third generation production facilities of Hwasung plant to the fourth generation.

V NAND stacks dozens of stages to stack the cells vertically in three dimensions. Also, there is a physical limitation such that the higher the number of stages, the more the structure becomes distorted. Samsung Electronics overcame the existing stacking limit with ultra-high-density cell structure as well as process technology called `9-hole`. Samsung Electronics stated that it secured the source technology which opens the era of `1Tb V NAND` that stores more than one trillion pieces of information in one semiconductor chip. The speed of writing 1Gb of data per second with high-speed operation circuit design is approximately 1.5 times faster than that of the third-generation V-NAND.

Kyung Gae-hyun, vice president of Flash Development Division of Memory Project, explained, "We have devoted ourselves to the development of innovative technologies in order to accelerate the era of Tera-V NAND. We will continue to develop next generation products in a timely manner and provide solution to meet global IT company and consumer demand.”


By Park Jung Il comja77@


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